Sökning: "Li Zhang"
Visar resultat 1 - 5 av 32 avhandlingar innehållade orden Li Zhang.
1. Nanofibrillar Materials for Organic and Printable Electronics
Sammanfattning : In recent years, organic electronics have attracted great attention due to their multiple advantages such as light weight, flexibility, large area fabrication and cost-effective production processes. The recent progress in fabricating organic electronic devices has been achieved with the development of new materials which provide competing functionalities to the electronics devices. LÄS MER
2. Ink-jet printing of thin film transistors based on carbon nanotubes
Sammanfattning : The outstanding electrical and mechanical properties of single-walled carbon nanotubes (SWCNTs) may offer solutions to realizing high-mobility and high-bendability thin-film transistors (TFTs) for the emerging flexible electronics. This thesis aims to develop low-cost ink-jet printing techniques for high-performance TFTs based on pristine SWCNTs. LÄS MER
3. Conformationally Constrained Oligonucleotides for RNA Targeting
Sammanfattning : A short oligonucleotide sequence as in a single-stranded antisense oligo nucleotides (AON) or in double-stranded small interfering RNAs (siRNA) can modulate the gene expression by targeting against the cellular mRNA, which can be potentially exploited for therapeutic purposes in the treatment of different diseases. In order to improve the efficacy of oligonucleotide-based drugs, the problem of target affinity, nuclease stability and delivery needs to be addressed. LÄS MER
4. Engineering Surfaces of Solid-State Nanopores for Biomolecule Sensing
Sammanfattning : Nanopores have emerged as a special class of single-molecule analytical tool that offers immense potential for sensing and characterizing biomolecules such as nucleic acids and proteins. As an alternative to biological nanopores, solid-state nanopores present remarkable versatility due to their wide-range tunability in pore geometry and dimension as well as their excellent mechanical robustness and stability. LÄS MER
5. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs
Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER