Sökning: "Integrated ferroelectric device"
Visar resultat 1 - 5 av 6 avhandlingar innehållade orden Integrated ferroelectric device.
1. Ferroelectric Na₀₅̣ K₀₅̣ NbO₃ varactors for microwave applications
Sammanfattning : .... LÄS MER
2. Ferroelectric Thin Films on Si-substrate for Tunable Microwave Applications
Sammanfattning : The thesis presents the development of microwave tunable devices based onferroelectric thin films. The main tasks in this work are the fabrication, optimization, andintegration of ferroelectric thin film into Si-MMIC. LÄS MER
3. Ferroelectric domain engineering and characterization for photonic applications
Sammanfattning : Lithium niobate (LiNbO3) and KTiOPO4 (KTP) are ferroelectric crystals of considerable interest in different fields of optics and optoelectronics. Due to its large values of the nonlinear optical, electro-optic (EO), piezoelectric and acousto-optical coefficients, LiNbO3 is widely used for laser frequency conversion using the quasiphase matching (QPM) approach where the sign of nonlinearity has been periodically modulated by electric field poling (EFP). LÄS MER
4. III-V Nanowire MOSFET High-Frequency Technology Platform
Sammanfattning : This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. LÄS MER
5. Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
Sammanfattning : With rapid increase in energy consumption of electronics used in our daily life, the building blocks — transistors — need to work in a way that has high energy efficiency and functional density to meet the demand of further scaling. III-V channel combined with vertical nanowire gate-all-around (GAA) device architecture is a promising alternative to conventional Si transistors due to its excellent electrical properties in the channel and electrostatic control across the gate oxide in addition to reduced footprint. LÄS MER