Sökning: "InGaSb"

Hittade 2 avhandlingar innehållade ordet InGaSb.

  1. 1. Type-II interband quantum dot photodetectors

    Författare :Oscar Gustafsson; Mattias Hammar; Wenquan Ma; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; photodetector; quantum dot; infrared; MOVPE; thermal imaging; type-II; photoluminescence; III V; InSb; InGaSb; InAs; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Sammanfattning : Photon detectors based on single-crystalline materials are of great interest for high performance imaging applications due to their low noise and fast response. The major detector materials for sensing in the long-wavelength infrared (LWIR) band (8-14 µm) are currently HgCdTe (MCT) and AlGaAs/GaAs quantum wells (QW) used in intraband-based quantum-well infrared photodetectors (QWIPs). LÄS MER

  3. 2. Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications

    Författare :Zhongyunshen Zhu; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : With rapid increase in energy consumption of electronics used in our daily life, the building blocks — transistors — need to work in a way that has high energy efficiency and functional density to meet the demand of further scaling. III-V channel combined with vertical nanowire gate-all-around (GAA) device architecture is a promising alternative to conventional Si transistors due to its excellent electrical properties in the channel and electrostatic control across the gate oxide in addition to reduced footprint. LÄS MER