Sökning: "InAs-GaAs"

Visar resultat 1 - 5 av 15 avhandlingar innehållade ordet InAs-GaAs.

1. 1. Spin Properties in InAs/GaAs Quantum Dot based Nanostructures

   Författare :Jan Beyer; Weimin Chen; Irina Buyanova; Hongqi Xu; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : Semiconductor quantum dots (QDs) are a promising building block of future spin-functional devices for applications in spintronics and quantum information processing. Essential to the realization of such devices is our ability to create a desired spin orientation of charge carriers (electrons and holes), typically via injection of spin polarized carriers from other parts of the QD structures. LÄS MER

3. 2. Optical Studies of InAs Quantum Dots in III-V Semiconductors

   Författare :Lars Landin; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum dots; III-V semiconductors; k.p calculations; photoluminescence; deep-level transient spectroscopy; photoconductivity; few particle effect; single dot spectroscopy; InAs InP; Semiconductory physics; Halvledarfysik; Fysicumarkivet A:2000:Landin; InAs GaAs;

   Sammanfattning : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. LÄS MER

4. 3. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

   Författare :Dan Hessman; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

   Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER

5. 4. Cathodoluminescence Studies of Quantum Structures and III-V nitrides

   Författare :Anders Petersson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; AlGaN; Fysik; Physics; GaN-AlGaN; single dot spectroscopy; InP-GaInP; Stranski Krastanow; quantum dots; quantum wires; low-dimensional structures; InAs-GaAs; III-V nitride; Cathodoluminescence; III-V semiconductors; Fysicumarkivet A:1999:Petersson;

   Sammanfattning : Characterization of low-dimensional semiconductor structures is a challenging task. The thesis is based on experiments, using cathodoluminescence (CL) as a tool for characterization. The high spatial resolution and the possibility of spectroscopy of small structures make CL one of the most powerful techniques for these types of investigations. LÄS MER

7. 5. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems

   Författare :Henric Åsklund; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; low temperature MBE; GaAs 111 A; InAs; core-level; GaMnAs; photoelectron spectroscopy; MEE; GaAs; InP 110 :As; valence-band; core-exciton; diluted magnetic semiconductor; MBE; interface; III-V semiconductor; surface; InAs 111 A; thin films;

   Sammanfattning : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. LÄS MER