Sökning: "III-V nanowires"

Visar resultat 1 - 5 av 84 avhandlingar innehållade orden III-V nanowires.

  1. 1. III-V Devices for Emerging Electronic Applications

    Författare :Patrik Olausson; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;

    Sammanfattning : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. LÄS MER

  3. 2. III-V Nanowires for High-Speed Electronics

    Författare :Fredrik Lindelöw; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; Hall; DC; RF; Nanowire; MOSFET; Hall; DC; RF;

    Sammanfattning : III-V compound materials have long been used in RF applications in high-electron-mobility-transistors (HEMTs) and bipolar-junction-transistors (BJTs). Now, III-V is also being viewed as a material candidate for replacing silicon in the n-channel in CMOS processes for increased drive currents and reduced power consumption in future nodes. LÄS MER

  4. 3. Vertical III-V Nanowire MOSFETs

    Författare :Olli-Pekka Kilpi; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; III-V; InGaAs; Vertical; Heterostructure; High frequency;

    Sammanfattning : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. LÄS MER

  5. 4. Transmission Electron Microscopy of III-V Nanowires and Nanotrees

    Författare :Lisa Karlsson; Centrum för analys och syntes; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Technological sciences; Naturvetenskap; Natural science; nanowires; TEM; III-V; Teknik;

    Sammanfattning : In this work, the morphology and crystal structure of epitaxial semiconductor nanowire structures grown by metal-organic vapour phase epitaxy (MOVPE) are studied by electron microscopy methods. In particular, the three-dimensional structure of nanowires and nanotrees has been characterised by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and multi-slice (MS) simulations. LÄS MER

  7. 5. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

    Författare :Adam Jönsson; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

    Sammanfattning : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. LÄS MER