Sökning: "High Electron Mobility Transistor HEMT"

Visar resultat 1 - 5 av 28 avhandlingar innehållade orden High Electron Mobility Transistor HEMT.

1. 1. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

   Författare :Eunjung Cha; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

   Sammanfattning : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. LÄS MER

3. 2. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Författare :Vincent Desmaris; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

4. 3. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers

   Författare :Pirooz Chehrenegar; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gallium nitride GaN ; radio base station receiver; cascode; high linearity; robustness.; cascade; high electron mobility transistor HEMT ; low noise; low noise amplifier;

   Sammanfattning : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. LÄS MER

5. 4. MOCVD growth of GaN-based high electron mobility transistor structures

   Författare :Jr-Tai Chen; Erik Janzén; Urban Forsberg; James S. Speck; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. LÄS MER

7. 5. Cryogenic InP High Electron Mobility Transistors in a Magnetic Field

   Författare :Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; magnetic field; cryogenic; low noise amplifier; angular dependence; InP HEMT; geometrical magnetoresistance;

   Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. In this thesis it is demonstrated that the InP HEMT, when placed in a magnetic field, has a strong angular dependence in its output current. LÄS MER