Sökning: "Heterojunction bipolar transistor HBT"

Visar resultat 1 - 5 av 12 avhandlingar innehållade orden Heterojunction bipolar transistor HBT.

1. 1. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

   Författare :Staffan Bruce; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

   Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER

3. 2. SiGeC Heterojunction Bipolar Transistors

   Författare :Erdal Suvar; KTH; []
   Nyckelord :Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

   Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER

4. 3. High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors

   Författare :B. Gunnar Malm; KTH; []
   Nyckelord :Silicon-Germanium SiGe ; heterojunction bipolar transistor HBT ; low-frequency noise; high-frequency noise; harmonic distortion; linearity; device simulation; collector profile; epitaxial base integration; radio frequency RF ; radio frequency inte;

   Sammanfattning : .... LÄS MER

5. 4. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors

   Författare :Martin Sandén; KTH; []
   Nyckelord :bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; polysilicon emitter; high-frequency measurement; low-frequency noise; noise modeling; hydrogen passivation; voltage controlled oscillator VCO ; pha;

   Sammanfattning : .... LÄS MER

7. 5. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

   Författare :Johan Pejnefors; KTH; []
   Nyckelord :chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

   Sammanfattning : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. LÄS MER