Sökning: "GaInP"

Visar resultat 1 - 5 av 24 avhandlingar innehållade ordet GaInP.

1. 1. InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization

   Författare :Xulu Zeng; Fasta tillståndets fysik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; GaInP; InP; tandem; tunnel diode; solar cell;

   Sammanfattning : Semiconductor nanowire solar cells have achieved comparable efficiency to their planar counterparts with substantial reduction of material consumption. Tandem geometry is a path towards even higher efficiency. However, extensive studies are needed to reach this goal. LÄS MER

3. 2. Mechanosensing Using GaInP Nanowires

   Författare :Zhen Li; Fasta tillståndets fysik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Traction force; fluorescent nanowires; morphology; migration; Fysicumarkivet A:2018:Li;

   Sammanfattning : Mechanical forces exists in many cellular processes, including cell proliferation, migration, rearrangement and differentiation. The transformation of cancer cells from normal cells, cancer metastasis and cell rearrangement during morphogenesis all involve changes in cellular mechanical forces. LÄS MER

4. 3. Scanning Tunneling Microscopy Induced Luminescence Studies of Semiconductor Nanostructures

   Författare :Ulf Håkanson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; transmission electron microscopy TEM ; III-V semiconductors; low-dimensional structures; nanostructures; single dot spectroscopy; Stranski-Krastanow; quantum dot QD ; Semiconductory physics; polarization; ordering; InP; GaInP; photon mapping; scanning tunneling microscopy STM ; scanning tunneling luminescence STL ; Halvledarfysik; Fysicumarkivet A:2003:Håkanson;

   Sammanfattning : This thesis treats scanning tunneling luminescence (STL) investigations of semiconductor nanostructures. The STL technique combines scanning tunneling microscopy (STM) with detection of photons, induced by the tunneling electrons. The high spatial resolution in STM and the local excitation allow for optical investigations on the nanometer-scale. LÄS MER

5. 4. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth

   Författare :Carlos Angulo Barrios; KTH; []
   Nyckelord :semiconductor lasers; in-plane lasers; VCSELs; GaAs; GaInP; semi-insulating materials; hydride vapour phase epitaxy; regrowth; buried heterostructure; leakage current; simulation;

   Sammanfattning : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. LÄS MER

7. 5. Nanostructured Semiconductor Materials for Light Manipulation Functions

   Författare :Dennis Visser; Srinivasan Anand; Alvaro Blanco; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; semiconductor materials; c-Si; a-Si; GaInP; TiO2; ZnO; nanostructuring; light manipulation functions; top-down fabrication; embossing; FDTD simulations; nanowires; nanopillars; nanodisks; microcones; optical response; reflectance; transmittance; absorbance; spectrophotometry; photoluminescence; Mie resonators; mode coupling; broadband anti-reflection; light extraction enhancement; optical sensing; optical color filters; color conversion; Optik och fotonik; Optics and Photonics;

   Sammanfattning : Structuring of semiconductor materials is utilized in many optoelectronic devices, e.g, in order to make them more efficient, cost-effective, and/or to obtain specific wavelength-engineered responses. Semiconductor materials are widely used in optoelectronic devices due to their favorable optical and electric properties. LÄS MER