Sökning: "Einar Sveinbjörnsson"

Hittade 4 avhandlingar innehållade orden Einar Sveinbjörnsson.

  1. 1. Electrical Properties of Gold-related Defect Complexes in Silicon

    Författare :Einar Sveinbjörnsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DLTS; gettering; Au in Si; lithium diffusion; Au-H complexes; Au-Li complexes; deep levels; phosphorus diffusion; hydrogen in silicon;

    Sammanfattning : This thesis describes three extensive experiments concerning the properties of gold as an impurity atom in crystalline silicon. The first study is an investigation of the effect of phosphorus diffusion on the distribution of gold atoms within a silicon crystal. LÄS MER

  2. 2. Carrier Lifetime Relevant Deep Levels in SiC

    Författare :Ian Don Booker; Einar Sveinbjörnsson; Erik Janzén; Anthony Peaker; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon carbide; Deep level transient spectroscopy; Deep level; Carrier lifetime; Time-resolved photoluminescence;

    Sammanfattning : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. LÄS MER

  3. 3. CVD growth of SiC for high-power and high-frequency applications

    Författare :Robin Karhu; Jawad ul-Hassan; Einar Sveinbjörnsson; Burk Albert; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. LÄS MER

  4. 4. Impact of Ionizing Radiation on 4H-SiC Devices

    Författare :Muhammad Usman; Anders Hallén; Einar Örn Sveinbjörnsson; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; ionizing radiation; bipolar junction transistors; reliability; surface passivation; high-k dielectrics; MIS; radiation hardness;

    Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER