Sökning: "C2H4"
Visar resultat 1 - 5 av 20 avhandlingar innehållade ordet C2H4.
1. Surface-Controlled Chemical Vapor Deposition of Silicon Carbide
Sammanfattning : Polycrystalline cubic silicon carbide, 3C-SiC, has long been investigated in the field of hard coating materials. The typical synthesis method for 3C-SiC coatings is thermal chemical vapor deposition (CVD) using either multicomponent precursors, e.g. methyltrichlorosilane, or a combination of single component precursors, e. LÄS MER
2. Precursors and defect control for halogenated CVD of thick SiC epitaxial layers
Sammanfattning : Silicon carbide (SiC) is a very hard semiconductor material with wide band gap, high breakdown electric field strength, high thermal conductivity and high saturation electron drift velocity making it a promising material for high frequency and high power devices. The performance of electrical devices is strongly dependent on the quality, doping level and thickness of the grown epitaxial layers. LÄS MER
3. Microfabrication of Tungsten, Molybdenum and Tungsten Carbide Rods by Laser-Assisted CVD
Sammanfattning : Thin films of refractory metals and carbides have been studied extensively over many years because of their wide range of application. The two major techniques used are Chemical Vapour Deposition (CVD) and Physical Vapour Deposition (PVD). These can result in the deposition of two-dimensional blanket or patterned thin films. LÄS MER
4. Microstructure aspects of transition metal carbide thin films
Sammanfattning : Transition metal carbides are important refractory materials used in many thin film applications. In this thesis, several transition metal carbides have been deposited using different chemical vapour deposition (CVD) and evaporation processes. In particular, the phase composition and microstructure of these carbide films have been studied. LÄS MER
5. Electron-Ion Recombination in Atmospheric and Laboratory Plasmas
Sammanfattning : In this thesis, the measurements performed at CRYRING, Stockholm University, on the dissociative recombination of C2H+, C2H4+, C2D5+, C3H7+, C3D7+, C4D9+, Na+(D2O), CF+, CF2+ and CO2+ are presented. The dissociative recombination is the reaction in which a positive molecular ion captures an electron and stabilizes the capture by dissociation into neutral fragments. LÄS MER
