Sökning: "AlSb"

Visar resultat 1 - 5 av 11 avhandlingar innehållade ordet AlSb.

  1. 1. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Författare :Malin Borg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Sammanfattning : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. LÄS MER

  3. 2. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER

  4. 3. Stability Phenomena in Novel Electrode Materials for Lithium-ion Batteries

    Författare :Mårten Stjerndahl; Torbjörn Gustafsson; John O. Thomas; Robert M. Kostecki; Uppsala universitet; []
    Nyckelord :Inorganic chemistry; Li-ion battery; electrode material; intermetallic; AlSb; lithium iron phosphate; lithium iron silicate; photoelectron spectroscopy; Oorganisk kemi;

    Sammanfattning : Li-ion batteries are not only a technology for the future, they are indeed already the technology of choice for today’s mobile phones, laptops and cordless power tools. Their ability to provide high energy densities inexpensively and in a way which conforms to modern environmental standards is constantly opening up new markets for these batteries. LÄS MER

  5. 4. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. LÄS MER

  7. 5. Heterostructure Diodes for Millimeter Wave Power Generation

    Författare :Hans Grönqvist; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Single barrier varactor diode; AlSb barrier; InAs substrate; high frequencies; Resonant Tunneling Diode;

    Sammanfattning : This thesis deals with two types of heterostructure diodes namely the Resonant Tunneling Diode (RTD) and the Single barrier varactor diode (SBV). The RTD is a device for high frequency generation either as a negative reistance oscillators or as a multiplier. Different means to reach high frequencies are outlined. LÄS MER