Sökning: "AlInN"

Hittade 3 avhandlingar innehållade ordet AlInN.

  1. 1. Localization effects in ternary nitride semiconductors

    Författare :Vytautas Liuolia; Saulius Marcinkevicius; Toshiharu Saiki; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; AlGaN; InGaN; AlInN; LEDs; near-field microscopy; carrier dynamics; alloy fluctuations; carrier localization; built-in electric field; nonpolar planes; polarized luminescence;

    Sammanfattning : InGaN based blue and near-ultraviolet light emitting diodes and laser diodes have been successfully commercialized for many applications such as general lighting, display backlighting and high density optical storage devices. Despite having a comparably high defect density, these devices are known for their efficient operation, which is attributed to localization in potential fluctuations preventing carriers from reaching the centers of nonradiative recombination. LÄS MER

  3. 2. Valence Electron Energy Loss Spectroscopy of III-Nitride Semiconductors

    Författare :Justinas Pališaitis; Per Persson; Lars Hultman; Jens Birch; Vicki Keast; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : This doctorate thesis covers both experimental and theoretical investigations of the optical responses of the group III-nitrides (AlN, GaN, InN) and their ternary alloys. The goal of this research has been to explore the usefulness of valence electron energy loss spectroscopy (VEELS) for materials characterization of group III-nitride semiconductors at the nanoscale. LÄS MER

  4. 3. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

    Författare :Thi Ngoc Do Thanh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low frequency noise; flicker noise; phase noise; deposition method.; oscillator; VCO; GaAs pHEMT; MMIC; GaN HEMT; passivation; InGaP HBT;

    Sammanfattning : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. LÄS MER