Sökning: "3D IC integration"

Visar resultat 1 - 5 av 8 avhandlingar innehållade orden 3D IC integration.

1. 1. Integration and Fabrication Techniques for 3D Micro- and Nanodevices

   Författare :Andreas C. Fischer; Frank Niklaus; Karl F. Böhringer; KTH; []
   Nyckelord :Microelectromechanical systems; MEMS; Nanoelectromechanical systems; NEMS; silicon; wafer-level; chip-level; through silicon via; TSV; packaging; 3D packaging; vacuum packaging; liquid encapsulation; integration; heterogeneous integration; wafer bonding; microactuators; shape memory alloy; SMA; wire bonding; magnetic assembly; self-assembly; 3D; 3D printing; focused ion beam; FIB;

   Sammanfattning : The development of micro and nano-electromechanical systems (MEMS and NEMS) with entirely new or improved functionalities is typically based on novel or improved designs, materials and fabrication methods. However, today’s micro- and nano-fabrication is restrained by manufacturing paradigms that have been established by the integrated circuit (IC) industry over the past few decades. LÄS MER

3. 2. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

4. 3. Carbon Based Materials Synthesis and Characterization for 3D Integrated Electronics

   Författare :Shuangxi Sun; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TIM; G-CNT; electrical resistivity; VA-CNTs; thermal resistance; 3D IC integration; TSV; graphene; VA-CNT-Solder; VA-CNT-Cu;

   Sammanfattning : 3D IC packaging technology extends Moore’s law and shifts the IC field into a new generation of smaller, but more powerful devices. Interconnection and thermal management as two critical parts of 3D IC integration packaging, are facing harsh challenges due to the miniaturization of IC devices. LÄS MER

5. 4. Test Cost Reduction of 3D Stacked ICs : Test Planning and Test Flow Selection

   Författare :Breeta Sengupta; Integrerade elektroniksystem; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; 3D Stacked Integrated Circuits 3D SIC ; Test Cost; Optimization; Test Flow; Design for Test DfT ; Test Application Time TAT ;

   Sammanfattning : Ever higher levels of integration within the Integrated Circuit (IC) tomeet progressively widening scope of its application in respect of functionality,size, performance and manufacturing issues inspired developmentof the three-dimensional (3D) Stacked IC as a device havingviable architecture. However, with increased complexity, manufacturingcost increased. LÄS MER

7. 5. Fundamental Characterization of Low Dimensional Carbon Nanomaterials for 3D Electronics Packaging

   Författare :Andreas Nylander; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Reliability aspects; Graphene; Thermal management; Carbon nanotubes; Electrical interconnects. Thermal interface material; Heat treatment.;

   Sammanfattning : Transistor miniaturization has over the last half century paved the way for higher value electronics every year along an exponential pace known as 'Moore's law'. Now, as the industry is reaching transistor features that no longer makes economic sense, this way of developing integrated circuits (ICs) is coming to its definitive end. LÄS MER